Electronic Devices and Circuits - Part 1 Online Exam Quiz

Electronic Devices and Circuits - Part 1 GK Quiz. Question and Answers related to Electronic Devices and Circuits - Part 1. MCQ (Multiple Choice Questions with answers about Electronic Devices and Circuits - Part 1

At room temperature the current in an intrinsic semiconductor is due to


A : holes

B : electrons

C : ions

D : holes and electrons

View Answer

Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.


A : True

B : False

C : -

D : -

View Answer

The most commonly used semiconductor material is


A : silicon

B : germanium

C : mixture of silicon and germanium

D : none of the above

View Answer

In which of these is reverse recovery time nearly zero?


A : Zener diode

B : Tunnel diode

C : Schottky diode

D : PIN diode

View Answer

A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is


A : 100

B : 99

C : 1.01

D : 0.99

View Answer

In p - n - p transistor the current I E has two components viz. I EP due to injection of holes from p -region to n -region and I E due to injection of electrons from n -region to p -region. Then


A : I E p and I E n are almost equal

B : I E p >> I E n

C : I E n >> I E p

D : either (a) or (c)

View Answer

In an n channel JFET, the gate is


A : n type

B : p type

C : either n or p

D : partially n & partially p

View Answer

The amount of photoelectric emission current depends on


A : frequency of incident radiation

B : intensity of incident radiation

C : both frequency and intensity of incident radiation

D : none of the above

View Answer

In the circuit of figure the function of resistor R and diode D are


A : to limit the current and to protect LED against over voltage

B : to limit the voltage and to protect LED against over current

C : to limit the current and protect LED against reverse breakdown voltage.

D : none of the above.

View Answer

At very high temperatures the extrinsic semi conductors become intrinsic because


A : drive in diffusion of dopants and carriers

B : band to band transition dominants over impurity ionization

C : impurity ionization dominants over band to band transition

D : band to band transition is balanced by impurity ionization

View Answer

Analog Electronics - Part 1 more Online Exam Quiz

Analog Electronics - Part 1

Automatic Control Systems - Part 1

Communication Systems - Part 1

Digital Electronics - Part 1

Electromagnetic Field Theory - Part 1

Exam Questions Papers - Exam Paper 1

Materials and Components - Part 1

Measurements and Instrumentation - Part 1

Microprocessors - Part 1

Microwave Communication - Part 1